SSF3617 Datasheet, Silikron Semiconductor

* VDS =-30V,ID =-10A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 18mΩ @ VGS=-10V
* High Power and current handling capability
* Lead free product is acquired
* S.

GENERAL FEATURES
* VDS =-30V,ID =-10A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 18mΩ @ VGS=-10V
* High Power and cur.

The SSF3617 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES
* VDS =-30V,ID =-10A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 18mΩ.